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DZT953 Scheda tecnica(PDF) 2 Page - Diodes Incorporated |
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DZT953 Scheda tecnica(HTML) 2 Page - Diodes Incorporated |
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2 / 4 page  Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO -140 -165 ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -100 -120 ⎯ V IC = -10mA*, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -6 -9 ⎯ V IE = -100μA, IC = 0 Collector Cutoff Current ICBO ⎯ ⎯ -50 -1 nA μA VCB = -100V, IE = 0 VCB = -100V, IE = 0, TA = 100°C Emitter Cutoff Current IEBO ⎯ ⎯ -10 nA VEB = - 6V, IC = 0 ON CHARACTERISTICS Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ ⎯ ⎯ -18 -70 -125 -260 -50 -115 -220 -420 mV IC = -100mA, IB = -10mA* IC = -1A, IB = -100mA* IC = -2A, IB = -200mA* IC = -4A, IB = -400mA* Base-Emitter Saturation Voltage VBE(SAT) ⎯ -960 -1170 mV IC = -4A, IB = -400mA* Base-Emitter Turn-On Voltage VBE(ON) ⎯ -880 -1160 mV ICE = -4A, VCE = -1V* DC Current Gain hFE 100 100 50 30 ⎯ 220 200 100 70 15 ⎯ 300 ⎯ ⎯ ⎯ ⎯ IC = -10mA, VCE = -1V* IC = -1A, VCE = -1V* IC = -3A, VCE = -1V* IC = -4A, VCE = -1V* IC = -10A, VCE = -1V* SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT ⎯ 125 ⎯ MHz IC = -100mA, VCE = -10V, f = 50MHz Output Capacitance Cobo ⎯ 65 ⎯ pF VCB = -10V, f = 1MHz SWITCHING CHARACTERISTICS Switching Times ton toff ⎯ 65 100 ⎯ ns IC = -2A, IB1 = -200mA IB2 = 200mA, VCC = -10V *Measured under pulsed conditions. Pulse width = 300 μs . Duty cycle ≤2% 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( C) A ° R = 125°C θJA Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 0 0.4 0.8 1.2 1.6 2.0 0 12 3 4 5 I = -8mA B I = -10mA B I = -2mA B I = -4mA B I = -6mA B -V , COLLECTOR-EMITTER VOLTAGE (V) CE Fig 2. Collector Current vs. Collector Emitter Voltage DS30941 Rev. 6 - 2 2 of 4 www.diodes.com DZT953 © Diodes Incorporated |
Codice articolo simile - DZT953_1 |
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