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FC591301 Scheda tecnica(PDF) 1 Page - Panasonic Semiconductor |
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FC591301 Scheda tecnica(HTML) 1 Page - Panasonic Semiconductor |
1 / 5 page Ver. AED This product complies with the RoHS Directive (EU 2002/95/EC). Publication date: January 2011 1 FC591301 Silicon N-channel MOS FET For switching circuits Overview FC591301 is N-channel dual type small signal MOS FET employed small size surface mounting package. Features Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V) High-speed switching Small size surface mounting package: SSMini5-F4-B Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Packaging Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit FET1 FET2 Drain-source surrender voltage VDSS 30 V Gate-source surrender voltage VGSS ± 12 V Drain current ID 100 mA Peak drain current IDP 200 mA Overall Total power dissipation PT 125 mW Channel temperature Tch 150 ° C Storage temperature Tstg –55 to +150 ° C Package Code SSMini5-F4-B Pin Name 1: Gate (FET1) 4: Drain (FET2) 2: Source (FET1/2) 5: Drain (FET1) 3: Gate (FET2) Marking Symbol: V3 Internal Connection 3 (G2) (D2) 4 1 (G1) 2 (S) (D1) 5 FET1 FET2 |
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