SB3100-T datasheet(1/3 Pages) DIODES

Il numero della parte	SB3100-T

Spiegazioni elettronici	3.0A SCHOTTKY BARRIER RECTIFIER

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Produttore elettronici	DIODES [Diodes Incorporated]

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SB370 - SB3100

3.0A SCHOTTKY BARRIER RECTIFIER

Features

•

Schottky Barrier Chip

•

Guard Ring Die Construction for Transient Protection

•

Low Power Loss, High Efficiency

•

High Surge Capability

•

High Current Capability and Low Forward Voltage Drop

•

Surge Overload Rating to 80A Peak

•

For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Applications

•

Lead Free Finish, RoHS Compliant (Note 3)

Mechanical Data

•

Case: DO-201AD

•

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminals: Finish - Tin. Solderable per MIL-STD-202,

Method 208

•

Polarity: Cathode Band

•

Marking Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 1.1 grams (approximate)

Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

Characteristic

Symbol

SB370

SB380

SB390

SB3100

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

70

80

90

100

V

RMS Reverse Voltage

VR(RMS)

49

56

63

70

V

Average Rectified Output Current

(Note 1)

@ TL = 80°C

IO

3.0

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

100

A

Forward Voltage

@ IF = 3.0A

VFM

0.79

V

Peak Reverse Current

@ TA = 25°C

at Rated DC Blocking Voltage

@ TA = 100°C

IRM

0.5

20

mA

Typical Junction Capacitance (Note 2)

Cj

250

pF

Thermal Characteristics

Characteristic

Symbol

SB370

SB380

SB390

SB3100

Unit

Typical Thermal Resistance Junction to Ambient

RθJA

20

K/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

°C

Notes:

1. Measured at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, See EU Directive Annex Notes 5 and 7.

SB370 - SB3100

Document number: DS30134 Rev. 3 - 2

1 of 3

www.diodes.com

July 2008

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