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2SC4497 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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2SC4497 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC4497 2003-03-27 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications · High voltage: VCBO = 300 V, VCEO = 300 V · Low saturation voltage: VCE (sat) = 0.5 V (max) · Small collector output capacitance: Cob = 3 pF (typ.) · Complementary to 2SA1721 Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 6 V Collector current IC 100 mA Base current IB 20 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Marking Unit: mm JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) |
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