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2SC3670 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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2SC3670 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SC3670 2004-07-07 3 Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Ambient temperature Ta (°C) PC – Ta Safe Operating Area Collector-emitter voltage VCE (V) 0 0 Common emitter Ta = 25°C 5 3 4 5 6 7 30 10 50 40 IB = 5 mA 20 3 1 1 2 4 2 0.1 Common emitter VCE = 1 V 20 50 100 500 0.3 3 −25 25 Ta = 100°C 5 1 0.5 300 0 0 0.2 0.4 0.6 0.8 1.0 1.2 20 40 60 80 100 120 160 140 Common emitter VCE = 1 V 0 0.6 0.8 1.2 Ta = 100°C 25 1.4 1.0 0.2 0.4 0 −25 5 3 1 2 4 Common emitter IC/IB = 40 0.1 0.3 3 5 1 0.5 0.02 0.05 0.1 0.5 0.3 −25 25 Ta = 100°C IC max (pulsed)* *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) DC operation Ta = 25°C 10 ms* 100 ms* 0.03 0.1 0.3 1 30 0.003 0.005 0.03 0.05 0.1 0.01 0.5 3 10 100 0.3 1 5 3 10 VCEO max |
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