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2SC2982 Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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2SC2982 Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2SC2982 2004-07-07 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 ― ― 0.1 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 0.1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 10 ― ― V Emitter-base breakdown voltage V (BR) EBO IE = 1 mA, IC = 0 6 ― ― V hFE (1) (Note 3) VCE = 1 V, IC = 0.5 A 140 ― 600 DC current gain hFE (2) VCE = 1 V, IC = 2 A 70 140 ― ― Collector-emitter saturation voltage VCE (sat) IC = 2 A, IB = 50 mA ― 0.2 0.5 V Base-emitter voltage VBE VCE = 1 V, IC = 2 A ― 0.86 1.5 V Transition frequency fT VCE = 1 V, IC = 0.5 A ― 150 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 27 ― pF Note 3: hFE (1) classification A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600 Marking S Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator |
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