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2SA1429 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor

Il numero della parte 2SA1429
Spiegazioni elettronici  Power Amplifier Applications Power Switching Applications
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1429 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor

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2SA1429
2010-03-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1429
Power Amplifier Applications
Power Switching Applications
• Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SC3669.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−80
V
Collector-emitter voltage
VCEO
−80
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−2
A
Base current
IB
−1
A
Collector power dissipation
PC
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)


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