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2SA1242 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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2SA1242 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SA1242 2010-02-05 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low collector saturation voltage : VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) • High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −35 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −8 V DC IC −5 Collector current Pulsed (Note 1) ICP −8 A Base current IB −0.5 A Ta = 25°C 1.0 Collector power dissipation Tc = 25°C PC 10 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) |
Codice articolo simile - 2SA1242_10 |
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