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2SA1213 Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor |
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2SA1213 Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor |
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4 / 5 page  2SA1213 2009-12-21 4 Collector-emitter voltage VCE (V) Safe Operating Area IC – VBE Base-emitter voltage VBE (V) 0 −1.2 −0.8 −0.4 0 −0.8 −2.0 −1.2 −0.4 −1.6 −1.6 −2.0 −2.4 Common emitter VCE = −2 V Ta = 100°C 25 −55 Ambient temperature Ta (°C) PC – Ta *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. −0.1 −3 −0.3 −30 −100 −3 −30 −10 −100 −5 −50 IC max (pulse)* IC max (continuous) 100 ms* 1 ms* 10 ms* VCEO max −10 −1 −300 −3000 −1000 −500 DC operation Ta = 25°C −1 1 s* 0 0 0.6 0.2 0.8 0.4 1.2 1.0 120 80 100 40 60 20 140 160 (1) Mounted on ceramic substrate (250 mm 2 × 0.8 t) (2) No heat sink (1) (2) |
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