STD30PF03LT4 datasheet(3/13 Pages) STMICROELECTRONICS

Il numero della parte	STD30PF03LT4

Spiegazioni elettronici	P-channel 30 V - 0.025 廓 - 24 A - DPAK / IPAK STripFET??II Power MOSFET

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STD30PF03LT4 - STD30PF03L-1

Electrical characteristics

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Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Note:

For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

30

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS=Max rating

VDS=Max rating,Tc=100 °C

1

10

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16 V

±

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

1V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 12 A

VGS= 5 V, ID= 12 A

0.025

0.032

0.028

0.040

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS =15 V, ID= 12 A

23

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1MHz, VGS=0

1670

345

120

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 24 A

VGS =5 V

Figure 15

18.6

5.5

11

28

nC

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