SD040SA60B datasheet(1/3 Pages) SENSITRON

Il numero della parte	SD040SA60B

Spiegazioni elettronici	SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 째C TJ Operation)

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SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 1019, REV. B

SILICON SCHOTTKY RECTIFIER DIE

Very Low Forward Voltage Drop (150

°C T

J Operation)

Applications:

• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Features:

•

Soft Reverse Recovery at Low and High Temperature

•

Very Low Forward Voltage Drop

•

Low Power Loss, High Efficiency

•

High Surge Capacity

•

Guard Ring for Enhanced Durability and Long Term Reliability

•

Guaranteed Reverse Avalanche Characteristics

•

Electrically / Mechanically Stable during and after Packaging

Maximum Ratings

(1):

Characteristics

Symbol

Condition

Max.

Units

Peak Inverse Voltage

VRWM

-

60

V

Max. Average Forward

Current

IF(AV)

50% duty cycle, rectangular

wave form

1

A

Max. Peak One Cycle Non-

Repetitive Surge Current

IFSM

8.3 ms, half Sine wave

20

A

Non-Repetitive Avalanche

Energy

EAS

TJ = 25 °C, IAS = 0.74 A,

L = 18 mH

5.0

mJ

Repetitive Avalanche Current

IAR

IAS decay linearly to 0 in 1 μs

ƒ limited by T

J max VA=1.5VR

0.74

A

Max. Junction Temperature

TJ

-

-65 to +150

°C

Max. Storage Temperature

Tstg

-

-65 to +150

°C

Electrical Characteristics

(1):

Characteristics

Symbol

Condition

Max.

Units

Max. Forward Voltage Drop

VF1

@ 1A, Pulse, TJ = 25 °C

0.60

V

VF2

@ 1A, Pulse, TJ = 125 °C

0.55

V

Max. Reverse Current

IR1

@VR = 60V, Pulse,

TJ = 25 °C

100

μA

IR2

@VR = 60V, Pulse,

TJ = 125 °C

9.0

mA

Max. Junction Capacitance

CT

@VR = 5V, TC = 25 °C

fSIG = 1MHz,

VSIG = 50mV (p-p)

53

pF

(1) in SHD package

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