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LA2900M Scheda tecnica(PDF) 2 Page - Sanyo Semicon Device |
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LA2900M Scheda tecnica(HTML) 2 Page - Sanyo Semicon Device |
2 / 5 page No. 6950-2/5 LA2900M Parameter Symbol Conditions Ratings Unit min typ max Quiescent current ICCO Rg = 0 7 11 15 mA Voltage gain VG VO = 0 dBm 7.5 8 8.5 dB Output voltage VO THD = 0.1% 5.0 5.3 Vrms Total harmonic distortion THD VO = 3 Vrms, LPF = 80 kHz 0.003 0.01 % Output noise voltage VNO Rg = 0, BPF = 20 Hz to 20 kHz 12 17 µVrms Ripple rejection ratio SVRR Rg = 0, fR = 1 kHz, VCCR = 100 mV, 60 70 dB BPF = 20 Hz to 20 kHz Channel separation CHsep Rg = 10 k Ω, VO = 1 Vrms 60 70 dB Input resistance Ri 20 30 39 k Ω Electrical Characteristics at Ta = 25°C, VCC = 9 V, RL = 10 kΩ, f = 1 kHz, Rg = 600Ω Parameter Symbol Conditions Ratings Unit Recommended operating voltage VCC 9 V Allowable operating supply voltage range VCCOP 6 to 12 V Recommended load resistance RLOP 10 k Ω Recommended Operating Conditions at Ta = 25°C |
Codice articolo simile - LA2900M |
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Descrizione simile - LA2900M |
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