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AM0912-150 Scheda tecnica(PDF) 1 Page - Advanced Semiconductor |
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AM0912-150 Scheda tecnica(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 60 mA 55 V BV CES IC = 100 mA 55 V BV EBO IE = 10 mA 3.5 V I CES VCB = 35 V 25 mA h FE VCE = 5.0 V IC = 5.0 A 20 --- POUT P G ηηηη C VCC = 35 V f = 960 to 1215 MHz PIN = 26.7 W 300 7.0 38 330 7.4 45 W dB % PACKAGE - .400 X .500 2L FLG RF POWER TRANSISTOR AM0912-150 DESCRIPTION: The ASI AM0912-150 is a Common Base Transistor Designed for TCAS and JTIDS Pulse Power Amplifier Applications. FEATURES INCLUDE: •••• Gold Metallization •••• Hermetic Package •••• Input/Output Matching MAXIMUM RATINGS IC 16.5 A VCC 35 V P DISS 300 W @ TC = ≤ 100 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θθθθ JC 0.57 °C/W |
Codice articolo simile - AM0912-150 |
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