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FW231 Scheda tecnica(PDF) 3 Page - Sanyo Semicon Device |
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FW231 Scheda tecnica(HTML) 3 Page - Sanyo Semicon Device |
3 / 4 page No.6071-3/4 FW231 SW Time - I D A S O P D - Ta td(off) tf tr td(on) 2 3 5 7 2 3 5 7 7 0.1 23 2 2 3 57 1.0 57 10 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 VDD=10V VGS=4V 0.4 0.8 1.2 2.4 2.0 1.7 1.6 0 0 20 40 60 80 100 120 140 160 IDP=52A ID=9A Operation in this area is limited by RDS(on). 10 µs 1ms 10ms 100ms DC operation 10 100 1000 1.0 0.1 0.01 10 100 23 5 7 23 5 7 23 23 57 10 0.1 1.0 0.01 Ciss, Coss, Crss - VDS VGS - Qg f = 1MHz 100 1000 2 3 5 7 10000 2 3 5 7 02 4 6 8 10 14 12 16 18 20 1 2 3 4 5 10 9 8 7 6 0 10 0 2030405060 Ciss Coss Crss R DS(on) - Ta I F - VSD 0.01 0.1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 1.0 10 0.3 0.2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VGS=0 Drain Current, ID –A Drain-to-Source Voltage, VDS –V Ambient Temperature, Ta – ˚C Ta=25 °C Single pulse 1 unit Mounted on a ceramic board (1000mm2 ×0.8mm) Drain-to-Source Voltage, VDS – V Total Gate Charge, Qg – nC Ambient Temperature, Ta – ˚C Diode Forward Voltage, VSD –V Mounted on a ceramic board (1000mm2 ×0.8mm) Total Dissipation 1 unit 5 0 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 ID=2A,V GS =2.5V ID=9A,V GS =4V |
Codice articolo simile - FW231 |
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Descrizione simile - FW231 |
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