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MC13851EP Scheda tecnica(PDF) 6 Page - Freescale Semiconductor, Inc |
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MC13851EP Scheda tecnica(HTML) 6 Page - Freescale Semiconductor, Inc |
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6 / 34 page  Electrical Specifications MC13851 Advance Information, Rev. 2.0 6 Freescale Semiconductor Active Current @ 2.75V, Rbias=1.2k Ω Icc — 4.8 5.8 mA Active Current @ 2.75V, Rbias=1.5k Ω Icc — 3.8 4.8 mA Active Gain S21 17.4 18.4 — dB Bypass RF Gain G -6.5 -4.9 — dB Bypass Noise Figure NF — 4.8 6.2 dB Bypass Input Third Order Intercept Point IIP3 24.5 26 — dBm Bypass Current — — 4 20 μA Bypass Gain S21 -6.5 -5 — dB 2140 MHz (Refer to Figure 9) Frequency f — 2140 — MHz Active RF Gain G 16.7 17.7 — dB Active Noise Figure NF — 1.46 1.75 dB Active Input Third Order Intercept Point IIP3 -3 -0.5 — dBm Active Input 1dB Compression Point P1dBoutput 6.7 8 — dBm Active Current @ 2.75V, Rbias=1.2k Ω Icc — 4.8 5.8 mA Active Current @ 2.75V, Rbias=1.5k Ω Icc — 3.8 4.8 mA Active Gain S21 16.5 17.6 — dB Bypass RF Gain G -5.8 -4.8 — dB Bypass Noise Figure NF — 4.9 5.9 dB Bypass Input Third Order Intercept Point IIP3 24.5 25.7 — dBm Bypass Current — — 4 20 μA Bypass Gain S21 -5.7 -4.7 — dB 2400 MHz (Refer to Figure 10) Frequency f — 2400 — MHz Active RF Gain G 15 16 — dB Active Noise Figure NF — 1.52 1.8 dB Active Input Third Order Intercept Point IIP3 -0.2 2 — dBm Active Input 1dB Compression Point P1dBoutput 7 8.1 — dBm Active Current @ 2.75V, Rbias=1.2k Ω Icc — 4.8 5.8 mA Active Current @ 2.75V, Rbias=1.5k Ω Icc — 3.8 4.8 mA Active Gain S21 14.7 15.7 — dB Bypass RF Gain G -6 -5 — dB Bypass Noise Figure NF — 5.2 5.8 dB Bypass Input Third Order Intercept Point IIP3 24 25.3 — dBm Bypass Current — — 4 20 μA Bypass Gain S21 -5.4 -5 — dB Table 5. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued) (Vcc = 2.75V, TA = 25°C, Rbias =1.2kΩ unless otherwise noted) Characteristic Symbol Min Typ Max Unit |
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