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TEA1521P Scheda tecnica(PDF) 9 Page - NXP Semiconductors

Il numero della parte TEA1521P
Spiegazioni elettronici  SMPS ICs for low-power systems
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Produttore elettronici  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo NXP - NXP Semiconductors

TEA1521P Scheda tecnica(HTML) 9 Page - NXP Semiconductors

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TEA152X
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 14 September 2010
9 of 20
NXP Semiconductors
TEA152x
SMPS ICs for low-power systems
9.
Limiting values
[1]
Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k
Ω series resistor. All pins
are 2500 V maximum, except pin DRAIN, which is 1000 V maximum.
[2]
Machine model: equivalent to discharging a 200 pF capacitor through a 0.75
μH coil and a 10 Ω series
resistor.
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are measured
with respect to ground; positive currents flow into the device; pins VCC and RC are not allowed to be
current driven and pins REG and AUX are not allowed to be voltage driven.
Symbol
Parameter
Conditions
Min
Max
Unit
Voltages
VCC
supply voltage
continuous
−0.4
+40
V
VRC
voltage on pin RC
−0.4
+3
V
Vsource
voltage on pin SOURCE
DMOS power
transistor
−0.4
+5
V
Vdrain
voltage on pin DRAIN
Tj >0 °C
−0.4
+650
V
Currents
IREG
current on pin REG
-
6
mA
IAUX
current on pin AUX
−10
+5
mA
Isource
source current
TEA1520x
−0.25
+0.25
A
TEA1521x
−0.5
+0.5
A
TEA1522x
−1+1
A
TEA1523P
−2+2
A
Idrain
drain current
TEA1520x
−0.25
+0.25
A
TEA1521x
−0.5
+0.5
A
TEA1522x
−1+1
A
TEA1523P
−2+2
A
General
Ptot
total power dissipation
DIP8 package
Tamb <45 °C-
1.0
W
SO14 package
Tamb <50 °C-
1.0
W
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−40
+145
°C
Vesd
electrostatic discharge voltage
human body model
[1] -
±2500 V
machine model
[2] -
±200
V


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