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IRFB3006PBF Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRFB3006PBF Scheda tecnica(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFB3006PbF 2 www.irf.com Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.022mH RG = 25Ω, IAS = 170A, VGS =10V. Part not recommended for use above this value . S D G ISD ≤ 170A, di/dt ≤ 1360A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 2.1 2.5 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 2.0 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 280 ––– ––– S Qg Total Gate Charge ––– 200 300 nC Qgs Gate-to-Source Charge ––– 37 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 60 Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 140 ––– td(on) Turn-On Delay Time ––– 16 ––– ns tr Rise Time ––– 182 ––– td(off) Turn-Off Delay Time ––– 118 ––– tf Fall Time ––– 189 ––– Ciss Input Capacitance ––– 8970 ––– pF Coss Output Capacitance ––– 1020 ––– Crss Reverse Transfer Capacitance ––– 534 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1480 ––– Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 1920 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 270c A (Body Diode) ISM Pulsed Source Current ––– ––– 1080 A (Body Diode) d VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 44 ––– ns TJ = 25°C VR = 51V, ––– 48 ––– TJ = 125°C IF = 170A Qrr Reverse Recovery Charge ––– 63 ––– nC TJ = 25°C di/dt = 100A/μs g ––– 77 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 2.4 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions VDS = 25V, ID = 170A ID = 170A VGS = 20V VGS = -20V MOSFET symbol showing the VDS =30V Conditions VGS = 10V g VGS = 0V VDS = 50V ƒ = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 48V i, See Fig. 11 VGS = 0V, VDS = 0V to 48V h TJ = 25°C, IS = 170A, VGS = 0V g integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 5mA d VGS = 10V, ID = 170A g VDS = VGS, ID = 250μA VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C ID = 170A RG = 2.7Ω VGS = 10V g VDD = 39V ID = 170A, VDS =0V, VGS = 10V |
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