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FC111 Scheda tecnica(PDF) 1 Page - Sanyo Semicon Device |
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FC111 Scheda tecnica(HTML) 1 Page - Sanyo Semicon Device |
1 / 2 page 52098HA (KT)/4139MO, TS No.3079-1/2 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Ordering number:EN3079 FC111 r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 0 5 –V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 0 5 –V e g a t l o V e s a B - o t - r e t t i m EV O B E 0 1 –V t n e r r u C r o t c e ll o CIC 0 0 1 –A m ) e s l u P ( t n e r r u C r o t c e ll o CI P C 0 0 2 –A m n o i t a p i s s i D r o t c e ll o CPC t i n u 1 0 0 2W m n o i t a p i s s i D l a t o TPT 0 0 3W m e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – Package Dimensions unit:mm 2066 [FC111] C1:Collerctor1 C2:Collerctor2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Features · On-chip bias resistors (R1=22kΩ, R2=22kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mount- ing efficiency greatly. · The FC111 is formed with two chips, being equiva- lent to the 2SA1342, placed in one package. · Excellent in thermal equilibrium and pair capability. Electrical Connection Note: The specifications shown above are for each individual transistor. Marking:111 Specifications Absolute Maximum Ratings at Ta = 25˚C ˚C ˚C Electrical Characteristics at Ta = 25˚C r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m t n e r r u C f f o t u C r o t c e ll o CI O B C V B C I , V 0 4 – = E 0 =1 . 0 –A µ t n e r r u C f f o t u C r o t c e ll o CI O E C V E C I , V 0 4 – = B 0 =5 . 0 –A µ t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 5 – = C 0 =0 7 –3 1 1 –0 6 1 –A µ n i a G t n e r r u C C Dh E F V E C I , V 5 – = C A m 5 – =0 5 t c u d o r P h t d i w d n a B - n i a GfT V E C I , V 0 1 – = C A m 5 – =0 0 2z H M e c n a t i c a p a C t u p t u Ob o CV B C z H M 1 = f , V 0 1 – =1 . 5F p e g a t l o V n o i t a r u t a S E - CV ) t a s ( E C IC I . A m 0 1 – = B A m 5 . 0 – =1 . 0 –3 . 0 –V e g a t l o V n w o d k a e r B B - CV O B C ) R B ( IC I , A µ 0 1 – = E 0 =0 5 –V e g a t l o V n w o d k a e r B E - CV O E C ) R B ( IC R , A µ 0 0 1 – = E B =∞ 0 5 –V e g a t l o V e t a t S - F F O t u p n IV ) f f o ( I V E C I , V 5 – = C A µ 0 0 1 – =8 . 0 –1 . 1 –5 . 1 –V e g a t l o V e t a t S - N O t u p n IV ) n o ( I V E C I , V 2 . 0 – = C A m 5 – =0 . 1 –9 . 1 –0 . 3 –V e c n a t s i s e R t u p n IR1 5 12 29 2k Ω o i t a R e c n a t s i s e RR1 R / 2 9 . 00 . 11 . 1 |
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