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SPI11N60C3 Scheda tecnica(PDF) 6 Page - Infineon Technologies AG

Il numero della parte SPI11N60C3
Spiegazioni elettronici  Cool MOS??Power Transistor Feature New revolutionary high voltage technology
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPI11N60C3 Scheda tecnica(HTML) 6 Page - Infineon Technologies AG

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200
7-0
8-30
Rev.
3 .2
Page 6
2
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
5 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-1
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
6 Transient thermal impedance FullPAK
ZthJC = f (tp)
parameter: D = tp/t
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
7 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
0
3
6
9
12
15
18
21
V
27
VDS
0
4
8
12
16
20
24
28
32
A
40
4,5V
5V
5,5V
6V
6,5V
7V
20V
10V
8V
8 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
0
5
10
15
V
25
VDS
0
2
4
6
8
10
12
14
16
18
A
22
4V
4.5V
5V
5.5V
6V
20V
8V
7V
7.5V


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