SPI21N50C3 datasheet(2/14 Pages) INFINEON

Il numero della parte	SPI21N50C3

Spiegazioni elettronici	Cool MOS??Power Transistor Feature New revolutionary high voltage technology

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Produttore elettronici	INFINEON [Infineon Technologies AG]

Homepage	http://www.infineon.com

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2 / 14 page

200

9-12-22

Rev.

3.2

page 2

SPP21N50C

3

SPI21N50C3, SPA21N50C3

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain Source voltage slope

VDS = 400 V, ID = 21 A, Tj = 125 °C

dv/dt

50

V/ns

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

Thermal resistance, junction - case

RthJC

-

0.6

K/W

Thermal resistance, junction - case, FullPAK

RthJC_FP

-

3.6

Thermal resistance, junction - ambient, leaded

RthJA

-

62

Thermal resistance, junction - ambient, FullPAK

RthJA_FP

-

80

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 3)

RthJA

-

35

62

-

Soldering temperature, wavesoldering

1.6 mm (0.063 in.) from case for 10s 4)

Tsold

-

260

°C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA

500

-

V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=21A

-

600

-

Gate threshold voltage

VGS(th)

ID=1000µA, VGS=VDS 2.1

3

3.9

Zero gate voltage drain current

IDSS

VDS=500V, VGS=0V,

Tj=25°C

Tj=150°C

-

0.1

-

1

100

µA

Gate-source leakage current

IGSS

VGS=20V, VDS=0V

-

100

nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=13.1A

Tj=25°C

Tj=150°C

-

0.16

0.54

0.19

-

Ω

Gate input resistance

RG

f=1MHz, open drain

-

0.53

-

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