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BF5020W Scheda tecnica(PDF) 1 Page - Infineon Technologies AG

Il numero della parte BF5020W
Spiegazioni elettronici  Silicon N-Channel MOSFET Tetrode
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BF5020W Scheda tecnica(HTML) 1 Page - Infineon Technologies AG

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2009-10-01
1
BF5020...
1
2
3
4
Silicon N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF- and
VHF - tuners with 3 V up to 5 V supply voltage
• Integrated gate protection diodes
• Excellent noise figure
• High gain, high forward transadmittance
• Improved cross modulation at gain reduction
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
EHA07461
GND
G1
G2
Drain
AGC
HF
Input
HF Output
+DC
GG
V
G1
R
ESD
(Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
BF5020
BF5020R
BF5020W
SOT143
SOT143R
SOT343
1 = S
1 = D
1 = D
2 = D
2 = S
2 = S
3 = G2
3 = G1
3 = G1
4 = G1
4 = G2
4 = G2
-
-
-
-
-
-
KYs
KYs
KYs
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source voltage
VDS
8
V
Continuous drain current
ID
25
mA
Gate 1/ gate 2-source current
IG1S, IG2S
± 10
mA
Gate 1/ gate 2-source voltage
VG1S, VG2S
± 6
V
Total power dissipation
TS
≤ 76 °C, BF5020, BF5020R
TS
≤ 94 °C, BF5020W
Ptot
200
200
mW
Storage temperature
Tstg
-55 ... 150
°C
Channel temperature
Tch
150


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