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BF5020W Scheda tecnica(PDF) 1 Page - Infineon Technologies AG |
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BF5020W Scheda tecnica(HTML) 1 Page - Infineon Technologies AG |
1 / 11 page 2009-10-01 1 BF5020... 1 2 3 4 Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage • Integrated gate protection diodes • Excellent noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101 EHA07461 GND G1 G2 Drain AGC HF Input HF Output +DC GG V G1 R ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF5020 BF5020R BF5020W SOT143 SOT143R SOT343 1 = S 1 = D 1 = D 2 = D 2 = S 2 = S 3 = G2 3 = G1 3 = G1 4 = G1 4 = G2 4 = G2 - - - - - - KYs KYs KYs Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 8 V Continuous drain current ID 25 mA Gate 1/ gate 2-source current IG1S, IG2S ± 10 mA Gate 1/ gate 2-source voltage VG1S, VG2S ± 6 V Total power dissipation TS ≤ 76 °C, BF5020, BF5020R TS ≤ 94 °C, BF5020W Ptot 200 200 mW Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150 |
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