SPI11N60CFD datasheet(3/12 Pages) INFINEON

Il numero della parte	SPI11N60CFD

Spiegazioni elettronici	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

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Produttore elettronici	INFINEON [Infineon Technologies AG]

Homepage	http://www.infineon.com

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3 / 12 page

200

9-04-24

Rev. 2.

6

Page 3

SP

I11N60CFD

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Transconductance

gfs

VDS

≥2*ID*RDS(on)max,

ID=7A

-

8.3

-

S

Input capacitance

Ciss

VGS=0V, VDS=25V,

f=1MHz

-

1200

-

pF

Output capacitance

Coss

-

390

-

Reverse transfer capacitance

Crss

-

30

-

Effective output capacitance,2)

energy related

Co(er)

VGS=0V,

VDS=0V to 480V

-

45

-

pF

Effective output capacitance,3)

time related

Co(tr)

-

85

-

Turn-on delay time

td(on)

VDD=380V, VGS=0/10V,

ID=11A, RG=6.8Ω

-

34

-

ns

Rise time

tr

-

18

-

Turn-off delay time

td(off)

-

43

-

Fall time

tf

-

7

-

Gate Charge Characteristics

Gate to source charge

Qgs

VDD=480V, ID=11A

-

9

-

nC

Gate to drain charge

Qgd

-

23

-

Gate charge total

Qg

VDD=480V, I D=11A,

VGS=0 to 10V

-

48

64

Gate plateau voltage

V(plateau) VDD=480V, ID=11A

-

7

-

V

1Repetitve avalanche causes additional power losses that can be calculated as P

AV=EAR*f.

2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

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