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BCW65CLT1G Scheda tecnica(PDF) 1 Page - ON Semiconductor |
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BCW65CLT1G Scheda tecnica(HTML) 1 Page - ON Semiconductor |
1 / 3 page © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 5 1 Publication Order Number: BCW65ALT1/D BCW65ALT1G, BCW65CLT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 32 Vdc Collector − Base Voltage VCBO 60 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 800 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1), TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. SOT−23 CASE 318 STYLE 6 http://onsemi.com Ex = Device Code x = A or C M = Date Code* G =Pb−Free Package MARKING DIAGRAMS 1 2 3 Device Package Shipping† ORDERING INFORMATION BCW65ALT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Ex M G G COLLECTOR 3 1 BASE 2 EMITTER BCW65CLT1G SOT−23 (Pb−Free) 3000/Tape & Reel (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. |
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