BC847CDXV6T1G datasheet(1/5 Pages) ONSEMI

Il numero della parte	BC847CDXV6T1G

Spiegazioni elettronici	Dual General Purpose Transistors

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October, 2010 − Rev. 2

1

Publication Order Number:

BC847CDXV6T1/D

BC847CDXV6T1,

BC847CDXV6T5

BC848CDXV6T1,

BC848CDXV6T5

Dual General Purpose

Transistors

NPN Duals

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−563 which is designed for

low power surface mount applications.

Features

• These are Pb−Free Devices

MAXIMUM RATINGS

Rating

Symbol

BC847

BC848

Unit

Collector − Emitter Voltage

VCEO

45

30

V

Collector − Base Voltage

VCBO

50

30

V

Emitter − Base Voltage

VEBO

6.0

5.0

V

Collector Current − Continuous

IC

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation, (Note 1)

TA = 25°C

Derate above 25°C

PD

357

2.9

mW

mW/°C

Thermal Resistance,

Junction-to-Ambient (Note 1)

RqJA

350

°C/W

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation, (Note 1)

TA = 25°C

Derate above 25°C

PD

500

4.0

mW

mW/°C

Thermal Resistance,

Junction-to-Ambient (Note 1)

RqJA

250

°C/W

Junction and Storage

Temperature Range

TJ, Tstg

−55 to +150

°C

1. FR−4 @ Minimum Pad

SOT−563

CASE 463A

PLASTIC

1

6

Q1

(1)

(2)

(3)

(4)

(5)

(6)

Q2

http://onsemi.com

MARKING DIAGRAMS

1x M G

G

BC847CDXV6T1

1x

= Device Code

x = G or M

M

= Date Code

G

=Pb−Free Package

(Note: Microdot may be in either location)

1

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

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