BCW32LT1G datasheet(2/6 Pages) ONSEMI

Il numero della parte	BCW32LT1G

Spiegazioni elettronici	General Purpose Transistors

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BCW32LT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 2.0 mAdc, VEB = 0)

V(BR)CEO

32

−

Vdc

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

32

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Collector Cutoff Current

(VCB = 32 Vdc, IE = 0)

(VCB = 32 Vdc, IE = 0, TA = 100°C)

ICBO

−

100

10

nAdc

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

hFE

200

−

450

−

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)

VCE(sat)

−

0.25

Vdc

Base −Emitter On Voltage

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

VBE(on)

0.55

−

0.70

Vdc

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)

Cobo

−

4.0

pF

Noise Figure

(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF

−

10

dB

TYPICAL NOISE CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C)

Figure 1. Noise Voltage

f, FREQUENCY (Hz)

5.0

7.0

10

20

3.0

Figure 2. Noise Current

f, FREQUENCY (Hz)

2.0

10

20

50

100

200

500

1k

2k

5k

10k

100

50

20

10

5.0

2.0

1.0

0.5

0.2

0.1

BANDWIDTH = 1.0 Hz

RS = 0

IC = 1.0 mA

100

mA

30

mA

BANDWIDTH = 1.0 Hz

RS ≈∞

10

mA

300

mA

IC = 1.0 mA

300

mA

100

mA

30

mA

10

mA

10

20

50

100

200

500

1k

2k

5k

10k

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