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BC848CDW1T1G Scheda tecnica(PDF) 4 Page - ON Semiconductor |
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BC848CDW1T1G Scheda tecnica(HTML) 4 Page - ON Semiconductor |
4 / 10 page BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G http://onsemi.com 4 TYPICAL CHARACTERISTICS − BC846BDW1T1G 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 7. VBE(on) at VCE = 5 V 150°C 25°C −55°C VCE = 5 V 10 100 1000 0.1 1 10 100 IC, COLLECTOR CURRENT (A) Figure 8. Current − Gain − Bandwidth Product VCE = 10 V TA = 25°C 1 10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Figure 9. Capacitances Cob Cib TA = 25°C IC = 20 mA IC = 50 mA IC = 100 mA TA = 25°C IB, BASE CURRENT (mA) Figure 10. Collector Saturation Region IC = 10 mA 0.1 1 10 100 IB, BASE CURRENT (mA) Figure 11. Base−Emitter Temperature Coefficient −55°C to 150°C qVB, for VBE −0.2 −0.6 −1 −1.4 −1.8 −2.2 −2.6 −3 0 0.4 0.8 1.2 1.6 2 0.01 0.1 1 10 100 VCE = 5 V |
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