STP4N150 datasheet(5/15 Pages) STMICROELECTRONICS

Il numero della parte	STP4N150

Spiegazioni elettronici	N-channel 1500 V, 5 廓, 4 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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STFW4N150, STP4N150, STW4N150

Electrical characteristics

Doc ID 11262 Rev 9

5/15

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

4

12

A

VSD

(2)

2.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward on voltage

ISD = 4 A, VGS = 0

-

2

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4 A,

di/dt = 100 A/µs

VDD = 45 V

Figure 21

-

510

3

12

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4 A,

di/dt = 100 A/µs

VDD = 45 V, Tj = 150°C

Figure 21

-

615

4

12.6

ns

µC

A

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