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STF25NM50N Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STF25NM50N
Spiegazioni elettronici  N-channel 500 V, 0.11 廓, 22 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF25NM50N Scheda tecnica(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STx25NM50N
4/18
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
500
V
dv/dt (1)
1.
Characteristic value at turn off on inductive load
Drain source voltage slope
VDD = 400 V, ID = 25 A,
VGS = 10 V
44
V/ns
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, @125 °C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 11 A
0.110 0.140
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance
VDS =15 V, ID = 11 A
19
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
2565
511
77
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
315
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 22 A,
VGS = 10 V,
(see Figure 19)
84
11
35
nC
nC
nC
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
1.6


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