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STD5NK60ZT4 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STD5NK60ZT4 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 14 page 3/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Table 7: Dynamic Table 8: Source Drain Diode Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 2.5 A 1.2 1.6 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 8 V, ID = 2.5 A 4 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 690 90 20 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 40 pF td(on) tr td(off) tr Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 300 V, ID = 2.5 A RG = 4.7 Ω VGS = 10 V (see Figure 20) 16 25 36 25 ns ns ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 5 A, RG = 4.7 Ω, VGS = 10V (see Figure 20) 12 10 24 ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400V, ID = 5 A, VGS = 10V (see Figure 23) 26 6 20 34 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 5 20 A A VSD (1) Forward On Voltage ISD = 5 A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see Figure 21) 485 2.7 11 ns µC A |
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