STB85NF55LT4 datasheet(5/14 Pages) STMICROELECTRONICS

Il numero della parte	STB85NF55LT4

Spiegazioni elettronici	N-channel 55 V, 0.0060 廓, 80 A, TO-220, D2PAK STripFET??II Power MOSFET

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5 / 14 page

STB85NF55L, STP85NF55L

Electrical characteristics

Doc ID 8544 Rev 8

5/14

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

ISD

Source-drain current

-

80

A

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

320

A

VSD

(2)

2.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward on voltage

ISD = 80 A, VGS = 0

-

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 80 A,

di/dt = 100 A/µs,

VDD = 20 V, TJ = 150 °C

Figure 16 on page 8

-

80

240

6

ns

nC

A

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