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STD70GK16 Scheda tecnica(PDF) 3 Page - Sirectifier Global Corp. |
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STD70GK16 Scheda tecnica(HTML) 3 Page - Sirectifier Global Corp. |
3 / 4 page STD/SDT70 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 1 Surge overload current I TSM, IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 4 Gate trigger characteristics Fig. 6 Gate trigger delay time 100 101 102 103 104 0.1 1 10 I G V G mA 1: I GT, TVJ = 125 oC 2: I GT, TVJ = 25 oC 3: I GT, TVJ = -40 oC V 4: P GAV = 0.5 W 5: P GM = 5 W 6: P GM = 10 W I GD, TVJ = 125 oC 3 4 2 1 5 6 10 100 1000 1 10 100 1000 mA I G s t gd Limit typ. T VJ = 25 oC 3 x STD/SDT70 |
Codice articolo simile - STD70GK16 |
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Descrizione simile - STD70GK16 |
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