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2SD1785 Scheda tecnica(PDF) 1 Page - Sanken electric |
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2SD1785 Scheda tecnica(HTML) 1 Page - Sanken electric |
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1 / 1 page 138 Darlington 2SD1785 I C– V CE Characteristics (Typical) h FE– I C Characteristics (Typical) θj-a–t Characteristics I C– V BE Temperature Characteristics (Typical) Pc – T a Derating Safe Operating Area (Single Pulse) f T– I E Characteristics (Typical) 0.4 2 1 Base-Emittor Voltage V BE(V) (V CE=2V) 0.5 1 5 1 1 0 100 1000 Time t(ms) 30 20 10 2 0 0 2 5 5 0 7 5 100 125 150 Ambient Temperature Ta(˚C) Without Heatsink –0.05 –0.1 –1 –0.5 –8 –5 0 50 120 100 (V CE=12V) Emitter Current I E(A) Typ 0 0 2 4 8 6 26 4 Collector-Emitter Voltage V CE(V) 0.7mA 1.5mA 1mA 2mA 3mA 5mA 10mA 0.5mA 0.4mA I B=0.3mA 0 6 8 4 2 0.03 0.1 1 5 10 100 500 1000 10000 5000 Collector Current I C(A) (V CE=2V) 0.5 Typ 10 3 5 200 100 50 0.05 1 0.1 0.5 10 20 5 Collector-Emitter Voltage V CE(V) Without Heatsink Natural Cooling DC V CE(sat) – I B Characteristics (Typical) 0 3 2 1 0.3 5 1 0 1 100 50 Base Current I B(mA) I C=6A 2A 4A Collector Current I C(A) 0.03 0.05 0.5 1 5 10 0.1 100 50 30 500 1000 5000 10000 (V CE=2V) 125˚C 25˚C –30˚C h FE– I C Temperature Characteristics (Typical) Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258) Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 120 120 6 6(Pulse10) 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sAbsolute maximum ratings sElectrical Characteristics Ratings 10max 10max 120min 2000min 1.5max 100typ 70typ Unit µA mA V V MHz pF Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=2A, IB=3mA VCE=12V, IE=–0.1A VCB=10V, f=1MHz (Ta=25°C) (Ta=25°C) Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB External Dimensions FM20(TO220F) ø3.3±0.2 10.1±0.2 2.54 2.54 1.35±0.15 0.85 +0.2 -0.1 1.35±0.15 2.2±0.2 4.2±0.2 2.8 c0.5 2.4±0.2 0.45 +0.2 -0.1 BE C a b sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL ( Ω) 10 IC (A) 3 VBB2 (V) –1.5 IB2 (mA) –3 ton ( µs) 0.5typ tstg ( µs) 5.5typ tf ( µs) 1.5typ IB1 (mA) 3 VBB1 (V) 10 Weight : Approx 2.0g a. Part No. b. Lot No. B C E (2.5k Ω)(200Ω) Equivalent circuit |
Codice articolo simile - 2SD1785 |
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Descrizione simile - 2SD1785 |
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