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KM684002-25 Scheda tecnica(PDF) 5 Page - Samsung semiconductor |
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KM684002-25 Scheda tecnica(HTML) 5 Page - Samsung semiconductor |
5 / 9 page KM684002, KM684002E, KM684002I CMOS SRAM PRELIMINARY Rev 3.0 - 5 - June -1997 TIMING DIAGRAMS TIMING WAVE FORM OF READ CYCLE(1)(Address Controlled, CS=OE=VIL, WE=VIH) ADD Data Out Previous Data Valid Data Valid WRITE CYCLE NOTE: Above parameters are also guaranteed at extended and industrial temperature ranges. Parameter Symbol KM684002-17 KM684002-20 KM684002-25 Unit Min Max Min Max Min Max Write Cycle Time tWC 17 - 20 - 25 - §À Chip Select to End of Write tCW 12 - 13 - 15 - §À Address Set-up Time tAS 0 - 0 - 0 - §À Address Valid to End of Write tAW 12 - 13 - 15 - §À Write Pulse Width(OE High) tWP 12 - 13 - 15 - §À Write Pulse Width(OE Low) tWP1 17 - 20 - 25 - §À Write Recovery Time tWR 0 - 0 - 0 - §À Write to Output High-Z tWHZ 0 8 0 8 0 10 §À Data to Write Time Overlap tDW 8 - 9 - 10 - §À Data Hold from Write Time tDH 0 - 0 - 0 - §À End Write to Output Low-Z tOW 3 - 4 - 5 - §À tRC tAA tOH |
Codice articolo simile - KM684002-25 |
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Descrizione simile - KM684002-25 |
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