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KM416V4104CS-45 Scheda tecnica(PDF) 4 Page - Samsung semiconductor

Il numero della parte KM416V4104CS-45
Spiegazioni elettronici  4M x 16bit CMOS Dynamic RAM with Extended Data Out
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Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416V4104CS-45 Scheda tecnica(HTML) 4 Page - Samsung semiconductor

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KM416V4004C,KM416V4104C
CMOS DRAM
*Note :
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one EDO mode cycle time,
tHPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @
tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @
tRC=min.)
ICC4* : Extended Data Out Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @
tHPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V
W, OE=VIH, Address=Don
′t care, DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM416V4004C
KM416V4104C
ICC1
Don
′t care
-45
-5
-6
90
80
70
130
120
110
mA
mA
mA
ICC2
Normal
L
Don
′t care
1
1
1
1
mA
mA
ICC3
Don
′t care
-45
-5
-6
90
80
70
130
120
110
mA
mA
mA
ICC4
Don
′t care
-45
-5
-6
100
90
80
100
90
80
mA
mA
mA
ICC5
Normal
L
Don
′t care
500
200
500
200
uA
uA
ICC6
Don
′t care
-45
-5
-6
130
120
110
130
120
110
mA
mA
mA
ICC7
L
Don
′t care
350
350
uA
ICCS
L
Don
′t care
350
350
uA


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