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KM416V4100C Scheda tecnica(PDF) 7 Page - Samsung semiconductor

Il numero della parte KM416V4100C
Spiegazioni elettronici  4M x 16bit CMOS Dynamic RAM with Fast Page Mode
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Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416V4100C Scheda tecnica(HTML) 7 Page - Samsung semiconductor

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KM416V4000C, KM416V4100C
CMOS DRAM
TEST MODE CYCLE
Parameter
Symbol
-45
-5
-6
Units
Note
Min
Max
Min
Max
Min
Max
Random read or write cycle time
tRC
85
95
115
ns
Read-modify-write cycle time
tRWC
120
138
160
ns
Access time from RAS
tRAC
50
55
65
ns
3,4,10,12
Access time from CAS
tCAC
17
18
20
ns
3,4,5,12
Access time from column address
tAA
28
30
35
ns
3,10,12
RAS pulse width
tRAS
50
10K
55
10K
65
10K
ns
CAS pulse width
tCAS
17
10K
18
10K
20
10K
ns
RAS hold time
tRSH
17
18
20
ns
CAS hold time
tCSH
50
55
65
ns
Column Address to RAS lead time
tRAL
28
30
35
ns
CAS to W delay time
tCWD
37
41
43
ns
7
RAS to W delay time
tRWD
72
78
88
ns
7
Column Address to W delay time
tAWD
48
53
58
ns
7
Fast Page mode cycle time
tPC
36
40
45
ns
Fast Page mode read-modify-write cycle time
tPRWC
75
81
90
ns
RAS pulse width (Fast page cycle)
tRASP
50
200K
55
200K
65
200K
ns
Access time from CAS precharge
tCPA
31
35
40
ns
3
OE access time
tOEA
17
18
20
ns
OE to data delay
tOED
17
18
18
ns
OE command hold time
tOEH
17
18
20
ns
( Note 11 )


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Descrizione simile - KM416V4100C

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