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KM416V1200C Scheda tecnica(PDF) 6 Page - Samsung semiconductor |
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KM416V1200C Scheda tecnica(HTML) 6 Page - Samsung semiconductor |
6 / 34 page KM416C1000C, KM416C1200C CMOS DRAM KM416V1000C, KM416V1200C AC CHARACTERISTICS (Continued) Parameter Symbol -5 -6 Units Notes Min Max Min Max Data set-up time tDS 0 0 ns 9,17 Data hold time tDH 10 10 ns 9,17 Refresh period (1K, Normal) tREF 16 16 ms Refresh period (4K, Normal) tREF 64 64 ms Refresh period (L-ver) tREF 128 128 ms Write command set-up time tWCS 0 0 ns 7 CAS to W delay time tCWD 36 40 ns 7,13 RAS to W delay time tRWD 73 85 ns 7 Column address to W delay time tAWD 48 55 ns 7 CAS precharge to W delay time tCPWD 53 60 ns 7 CAS set-up time (CAS-before-RAS refresh) tCSR 5 5 ns 15 CAS hold time (CAS-before-RAS refresh) tCHR 10 10 ns 16 RAS to CAS precharge time tRPC 5 5 ns Access time from CAS precharge tCPA 30 35 ns 3 Fast Page mode cycle time tPC 35 40 ns Fast Page read-modify-write cycle time tPRWC 76 80 ns CAS precharge time (Fast Page cycle) tCP 10 10 ns 12 RAS pulse width (Fast Page cycle) tRASP 50 200K 60 200K ns RAS hold time from CAS precharge tRHCP 30 35 ns OE access time tOEA 13 15 ns 3 OE to data delay tOED 13 15 ns Output buffer turn off delay time from OE tOEZ 0 13 0 15 ns OE command hold time tOEH 13 15 ns RAS pulse width (C-B-R self refresh) tRASS 100 100 us 18,19,20 RAS precharge time (C-B-R self refresh) tRPS 90 110 ns 18,19,20 CAS hold time (C-B-R self refresh) tCHS -50 -50 ns 18,19,20 |
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