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2SD1949 Scheda tecnica(PDF) 2 Page - Rohm

Il numero della parte 2SD1949
Spiegazioni elettronici  Medium Power Transistor (50V, 0.5A)
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Produttore elettronici  ROHM [Rohm]
Homepage  http://www.rohm.com
Logo ROHM - Rohm

2SD1949 Scheda tecnica(HTML) 2 Page - Rohm

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Transistors
2SD1949 / 2SD1484K
2/2
Electrical characteristic curves
20
10
5
2
1
0.5
0.2
0.1
0.2
0
0.4
0.8
0.6
1.2
1.0
50
100
200
BASE TO VOLTAGE : VBE (V)
Fig.1 Ground emitter propagation
characteristics
VCE=6V
60
40
20
0
1
024
35
80
100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Ground emitter output characteristics
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
IB=0mA
VCE=6V
500
200
100
50
0.1 0.2 0.5 1 2
5 10 20
50 100 200 500
1000
COLLECTOR CURRENT IC (mA)
Fig.3 DC current gain vs. Collector current ( )
1000
500
200
100
50
20
12
5
10 20
50 100 200 500 1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
Fig.4 DC current gain vs. Collector currnet ( )
VCE=10V
-25 C
Ta=75 C
25 C
50
20
10
5
0.1 0.2
0.5
12
510 20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Input-and-output capacity
vs.voltage characteristic
Ta=25 C
f=1MHz
IE=0A
0.5
0.2
0.1
0.05
0.02
5
10 20
50 100 200 500 1000
COLLECTOR CURRENT IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current
IC/IB=10
-25 C
Ta=75 C
25 C
0.5
0.2
0.1
0.05
0.02
5
10
20
50 100 200
500
Fig.5 Collector-emitter saturation voltage
vs. Collector current
EMITTER CURRENT : IE (mA)
500
200
100
-1
-2
-5
-10
-20
-50
Fig.8 Transition frequency
vs.emitter current
Ta=25 C
Cib
Cob
Ta=25 C
Ta=25 C
VCE=3V
1V
IC/IB
=100/1
50/1
20/1
10/1
VCE=6V
Rev.B


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