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2SD1760 Scheda tecnica(PDF) 1 Page - Rohm |
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2SD1760 Scheda tecnica(HTML) 1 Page - Rohm |
1 / 3 page 2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 ! ! ! !Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. ! ! ! !Structure Epitaxial planar type NPN silicon transistor ! ! ! !External dimensions (Units : mm) (1) Base (2) Collector (3) Emitter (1) Emitter (2) Collector (3) Base ROHM : CPT3 EIAJ : SC-63 ROHM : ATV 6.8 ±0.2 2.5 ±0.2 1.05 0.45 ±0.1 2.54 2.54 0.5 ±0.1 (1) (2) (3) 0.65Max. 2SD1760 2SD1864 −0.1 +0.2 −0.1 +0.2 2.3±0.2 2.3±0.2 0.65±0.1 0.9 0.75 1.0±0.2 0.55±0.1 2.3 0.5±0.1 6.5±0.2 5.1 C0.5 (3) (2) (1) ! ! ! !Absolute maximum ratings (Ta = 25 °C) Parameter Symbol Limits Unit VCBO 60 V VCEO 50 V VEBO 5V IC 3 A (DC) 4.5 A (Pulse) *1 Tj 150 °C Tstg −55~+150 °C 2SD1864 2SD1760 1 15 W (Tc =25 °C)*2 PC *1 Single pulse, PW = 100ms *2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. W Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Collector power dissipation |
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