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TPC8127 Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor |
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TPC8127 Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPC8127 2009-11-20 4 ID – VDS ID – VDS −100 −16 −20 −1.6 −2 −0.8 −1 VGS = −4.5 V −10 10 100 −0.1 −1 −10 1 −6.5 ID = −13 A −3 0 −4 −8 −12 0 −0.1 −0.2 −0.3 −0.4 −55 Ta = 100°C 25 −1 −2 −3 −4 0 0 −0.4 −0.8 −1.2 0 −10 −20 −30 −40 −50 −2.4 −3.2 −3 −2.5 −2.8 −6 −4.5 VGS = −2.1 V −10 −2.3 −2.2 −2.5 −4.5 −2.8 0 −0.2 −0.4 −0.6 0 −4 −8 −12 −16 −20 −3 −2.6 VGS = −2.1 V −2.4 −3.4 −2.3 −2.6 −10 −6 −2.2 −3.8 0 −10 −20 −30 −40 −50 ID – VGS VDS – VGS RDS (ON) – ID Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Common source VDS = −10 V Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Drain −source voltage VDS (V) Drain-source voltage VDS (V) Gate −source voltage VGS (V) Gate −source voltage VGS (V) Drain current ID (A) |
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