PZT3906T1G datasheet(2/7 Pages) ONSEMI

Il numero della parte	PZT3906T1G

Spiegazioni elettronici	General Purpose Transistor PNP Silicon

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Produttore elettronici	ONSEMI [ON Semiconductor]

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PZT3906T1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS (Note 2)

Collector−Emitter Breakdown Voltage (Note 2)

(IC = −1.0 mAdc, IB = 0)

V(BR)CEO

−40

−

Vdc

Collector−Base Breakdown Voltage

(IC = −10 mAdc, IE = 0)

V(BR)CBO

−40

−

Emitter−Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

V(BR)EBO

−5.0

−

Base Cutoff Current

(VCE = −30 Vdc, VEB = −3.0 Vdc)

IBL

−

−50

nAdc

Collector Cutoff Current

(VCE = −30 Vdc, VEB = −3.0 Vdc)

ICEX

−

−50

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = −0.1 mAdc, VCE = −1.0 Vdc)

(IC = −1.0 mAdc, VCE = −1.0 Vdc)

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −50 mAdc, VCE = −1.0 Vdc)

(IC = −100 mAdc, VCE = −1.0 Vdc)

HFE

60

80

100

60

30

−

300

−

Collector−Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

VCE(sat)

−

−0.25

−0.4

Vdc

Base −Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

VBE(sat)

−0.65

−

−0.85

−0.95

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)

fT

250

−

MHz

Output Capacitance

(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

4.5

pF

Input Capacitance

(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

10

Input Impedance

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hie

2.0

12

kW

Voltage Feedback Ratio

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hre

0.1

10

X 10−4

Small−Signal Current Gain

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hfe

100

400

−

Output Admittance

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hoe

3.0

60

mmhos

Noise Figure

(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

NF

−

4.0

dB

SWITCHING CHARACTERISTICS

Delay Time

(VCC = −3.0 Vdc, VBE = 0.5 Vdc,

IC = −10 mAdc, IB1 = −1.0 mAdc)

td

−

35

ns

Rise Time

tr

−

35

Storage Time

(VCC = −3.0 Vdc, IC = −10 mAdc,

IB1 = IB2 = −1.0 mAdc)

ts

−

225

Fall Time

tf

−

75

2. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

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