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GS3A Scheda tecnica(PDF) 1 Page - Gulf Semiconductor |
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GS3A Scheda tecnica(HTML) 1 Page - Gulf Semiconductor |
1 / 2 page Rev.A7 www.gulfsemi.com GS3A THRU GS3M SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE: : : :50 TO 1000V CURRENT: : : : 3.0A FEATURE SMC/ / / /DO-214AB Ideal for surface mount pick and place application Low profile package Built-in strain relief High surge capability High temperature soldering guaranteed 260℃/10sec/at terminals MECHANICAL DATA Terminal:Plated axial leads solderable per MIL-STD 202E, method 208C Case:Molded with UL-94 class V-0 recognized Flame Retardant Epoxy Polarity:color band denotes cathode Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated, for capacitive load, derate current by 20%) SYMBOL GS 3A GS 3B GS 3D GS 3G GS 3J GS 3K GS 3M units Maximum Recurrent Peak Reverse Voltage Vrrm 50 100 200 400 600 800 1000 V Maximum RMS Voltage Vrms 35 70 140 280 420 560 700 V Maximum DC blocking Voltage Vdc 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current 3/8″lead length at TL =75℃ If(av) 3.0 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Ifsm 100.0 A Maximum Forward Voltage at rated Forward current Vf 1.1 V Maximum DC Reverse Current Ta =25℃ at rated DC blocking voltage Ta =125℃ Ir 5.0 250 uA Typical Reverse Recovery Time (Note 1) Trr 2.3 us Typical Junction Capacitance (Note 2) Cj 60.0 pF Typical Thermal Resistance (Note 3) Rth(ja) Rth(jl) Rth(jc) 47.0 13.0 28.0 ℃/W Storage and Operating Temperature Range Tstg -50 to +150 ℃ Note: 1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 2. Measured at 1.0 MHz and applied voltage of 4.0Vdc 3. Thermal Resistance from junction to ambient and from junction to lead mounted on 8×8mm copper pad area |
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