BTB16-700BW3G datasheet(2/6 Pages) ONSEMI

Il numero della parte	BTB16-700BW3G

Spiegazioni elettronici	Triacs Silicon Bidirectional Thyristors

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance,

Junction−to−Case (AC)

Junction−to−Ambient

RqJC

RqJA

1.9

60

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds

TL

260

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

TJ = 25°C

TJ = 125°C

IDRM/

IRRM

−

0.005

2.0

mA

ON CHARACTERISTICS

Peak On-State Voltage (Note 2)

(ITM = ±22.5 A Peak)

VTM

−

1.55

V

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IGT

2.5

−

50

mA

Holding Current

(VD = 12 V, Gate Open, Initiating Current = ±150 mA)

IH

−

60

mA

Latching Current (VD = 12 V, IG = 50 mA)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IL

−

70

90

70

mA

Gate Trigger Voltage (VD = 12 V, RL = 30 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VGT

0.5

−

1.7

1.1

V

Gate Non−Trigger Voltage (TJ = 125°C)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VGD

0.2

−

V

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current, See Figure 10.

(Gate Open, TJ = 125°C, No Snubber)

(dI/dt)c

7.5

−

A/ms

Critical Rate of Rise of On−State Current

(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)

dI/dt

−

50

A/ms

Critical Rate of Rise of Off-State Voltage

(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)

dV/dt

1500

−

V/ms

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

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