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BD138 Scheda tecnica(PDF) 2 Page - ON Semiconductor |
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BD138 Scheda tecnica(HTML) 2 Page - ON Semiconductor |
2 / 4 page BD136, BD138, BD140 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Type Min Max Unit Collector−Emitter Sustaining Voltage* (IC = 0.03 Adc, IB = 0) BVCEO BD 136 BD 138 BD 140 45 60 80 − − − Vdc Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TC = 125 _C) ICBO − − 0.1 10 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 10 mAdc DC Current Gain (IC = 0.005 A, VCE = 2 V) (IC = 0.15 A, VCE = 2 V) (IC = 0.5 A, VCE = 2 V) hFE* 25 40 25 − 250 − − Collector−Emitter Saturation Voltage* (IC = 0.5 Adc, IB = 0.05 Adc) VCE(sat)* − 0.5 Vdc Base−Emitter On Voltage* (IC = 0.5 Adc, VCE = 2.0 Vdc) VBE(on)* − 1 Vdc *Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%. BD136 BD138 BD140 TJ = 125°C dc 5 ms 0.5 ms 0.1 ms 10 1 Figure 1. Active−Region Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 5.0 2.0 1.0 0.5 0.01 2 5 10 20 80 50 0.1 0.05 0.02 0.2 |
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