BC818-40LT1G datasheet(3/4 Pages) ONSEMI

Il numero della parte	BC818-40LT1G

Spiegazioni elettronici	General Purpose Transistors NPN Silicon

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BC818−40LT1G

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IB, BASE CURRENT (mA)

Figure 2. Saturation Region

IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

100

10

1

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Temperature Coefficients

+1

IC, COLLECTOR CURRENT (mA)

Figure 5. Capacitances

0.1

1

10

100

1000

-2

-1

0

1.0

0.8

0.6

0.4

0.2

0

0.01

0.1

10

100

1

1.0

0.8

0.6

0.4

0.2

0

1

10

1000

100

10

100

TJ = 25°C

IC = 10 mA

TA = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1 V

VCE(sat) @ IC/IB = 10

qVC for VCE(sat)

qVB for VBE

Cob

Cib

100 mA

300 mA

500 mA

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