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TPC8208 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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TPC8208 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPC8208 2006-11-16 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 200 µA 0.5 ⎯ 1.2 V VGS = 2.0 V, ID = 2.5 A ⎯ 57 100 VGS = 2.5 V, ID = 2.5 A ⎯ 46 70 Drain-source ON resistance RDS (ON) VGS = 4.0 V, ID = 2.5 A ⎯ 38 50 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 3.2 6.3 ⎯ S Input capacitance Ciss ⎯ 780 ⎯ Reverse transfer capacitance Crss ⎯ 90 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 100 ⎯ pF Rise time tr ⎯ 5.0 ⎯ Turn-ON time ton ⎯ 12 ⎯ Fall time tf ⎯ 2.7 ⎯ Switching time Turn-OFF time toff Duty <= 1%, tw = 10 µs ⎯ 21 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 9.5 ⎯ Gate-source charge 1 Qgs1 ⎯ 2.0 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− 16 V, VGS = 5 V, ID = 5 A ⎯ 2.2 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 20 A Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ∼− 10 V 0 V VGS 5 V ID = 2.5 A VOUT |
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