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TPC8112 Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor

Il numero della parte TPC8112
Spiegazioni elettronici  Lithium Ion Applications Notebook PC Applications Portable Equipment Applications
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TPC8112 Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor

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TPC8112
2006-11-15
4
ID – VDS
ID – VDS
ID – VGS
VDS – VGS
|Yfs| – ID
RDS (ON) – ID
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
Gate-source voltage VGS (V)
Drain current ID (A)
Drain current ID (A)
−2
−3
−4
−5
Common source
VDS = −10 V
Pulse test
0
−20
−30
−40
−50
−10
0
−1
100
Ta
= −55°C
25
0.3
−0.1
−0.3
−1
−3
−10
−30
−100
1
3
10
30
100
Common source
VDS = −10 V
Pulse test
Ta
= −55°C
100
25
0
−4
−8
−12
−16
−20
−0.4
−0.6
−0.8
−1.0
0
−0.2
0
−4
−8
−12
−16
−20
−0.4
−0.6
−0.8
−1.0
0
−0.2
−10
−8
−6
−4
−2.8
−3
−2.6
−2.2
−2.4
VGS = −2 V
Common source
Ta
= 25°C
Pulse test
−2
−3
−4
−5
0
−20
−30
−40
−50
−10
0
−1
−3
−6
−8
−10
−2.8
−4
−2.6
−2.2
VGS = −2 V
−2.4
Common source
Ta
= 25°C
Pulse test
−8
−12
−16
−20
0
−0.2
−0.3
−0.4
−0.5
−0.1
0
−4
ID = −13 A
−3
−6.5
Common source
Ta
= 25°C
Pulse test
−100
0.1
−0.1
−1
−10
1
10
100
−10
VGS = −4 V
Common source
Ta
= 25°C
Pulse test


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