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TPC8112 Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor |
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TPC8112 Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPC8112 2006-11-15 4 ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V) Drain current ID (A) Drain current ID (A) −2 −3 −4 −5 Common source VDS = −10 V Pulse test 0 −20 −30 −40 −50 −10 0 −1 100 Ta = −55°C 25 0.3 −0.1 −0.3 −1 −3 −10 −30 −100 1 3 10 30 100 Common source VDS = −10 V Pulse test Ta = −55°C 100 25 0 −4 −8 −12 −16 −20 −0.4 −0.6 −0.8 −1.0 0 −0.2 0 −4 −8 −12 −16 −20 −0.4 −0.6 −0.8 −1.0 0 −0.2 −10 −8 −6 −4 −2.8 −3 −2.6 −2.2 −2.4 VGS = −2 V Common source Ta = 25°C Pulse test −2 −3 −4 −5 0 −20 −30 −40 −50 −10 0 −1 −3 −6 −8 −10 −2.8 −4 −2.6 −2.2 VGS = −2 V −2.4 Common source Ta = 25°C Pulse test −8 −12 −16 −20 0 −0.2 −0.3 −0.4 −0.5 −0.1 0 −4 ID = −13 A −3 −6.5 Common source Ta = 25°C Pulse test −100 0.1 −0.1 −1 −10 1 10 100 −10 VGS = −4 V Common source Ta = 25°C Pulse test |
Codice articolo simile - TPC8112_06 |
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Descrizione simile - TPC8112_06 |
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