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TPC8211 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte TPC8211
Spiegazioni elettronici  Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TPC8211
2007-01-16
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
Drain cut−OFF current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = −20 V
15
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.3
2.5
V
RDS (ON)
VGS = 4.5 V, ID = 3 A
31
44
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A
25
36
mΩ
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
3.5
7.0
S
Input capacitance
Ciss
1250
Reverse transfer capacitance
Crss
155
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
170
pF
Rise time
tr
5
Turn−ON time
ton
11
Fall time
tf
9
Switching time
Turn−OFF time
toff
Duty <= 1%, tw = 10 µs
63
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
25
Gate−source charge
Qgs
20
Gate−drain (“miller”) charge
Qgd
VDD ≈ 24 V, VGS = 10 V, ID = 5.5 A
5
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
IDRP
22
A
Forward voltage (diode)
VDSF
IDR = 5.5 A, VGS = 0 V
−1.2
V
VDD ∼− 15 V
0 V
VGS
10 V
ID = 3 A
VOUT


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