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TPC8211 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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TPC8211 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPC8211 2007-01-16 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — ― ±10 µA Drain cut−OFF current IDSS VDS = 30 V, VGS = 0 V ― ― 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ― ― Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ― 2.5 V RDS (ON) VGS = 4.5 V, ID = 3 A ⎯ 31 44 Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 3 A ― 25 36 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A 3.5 7.0 ― S Input capacitance Ciss ― 1250 ― Reverse transfer capacitance Crss ― 155 ― Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ― 170 ― pF Rise time tr ― 5 ― Turn−ON time ton ― 11 ― Fall time tf ― 9 ― Switching time Turn−OFF time toff Duty <= 1%, tw = 10 µs ― 63 ― ns Total gate charge (Gate−source plus gate−drain) Qg ― 25 ― Gate−source charge Qgs ― 20 ― Gate−drain (“miller”) charge Qgd VDD ≈ 24 V, VGS = 10 V, ID = 5.5 A ― 5 ― nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP — — — 22 A Forward voltage (diode) VDSF IDR = 5.5 A, VGS = 0 V — — −1.2 V VDD ∼− 15 V 0 V VGS 10 V ID = 3 A VOUT |
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