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TPC8210 Scheda tecnica(PDF) 5 Page - Toshiba Semiconductor |
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TPC8210 Scheda tecnica(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPC8210 2007-01-16 5 RDS (ON) – Ta Ambient temperature Ta (°C) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Drain-source voltage VDS (V) 0.1 1 10 100 10 100 1000 10000 Crss Coss Ciss Common source VGS = 10 V ID = 1 mA Pulse test Vth – Ta Ambient temperature Ta (°C) PD – Ta Ambient temperature Ta (°C) 0 0 0.5 1.0 1.5 2 50 100 150 200 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (1) (2) (3) (4) Dynamic input/output characteristics Total gate charge Qg (nC) −80 −40 0 40 80 160 120 0 5 10 25 15 20 Common source Pulse test VGS = 4.5 V ID = 8, 4, 2 A 10 V ID = 8, 4, 2 A −80 −40 0 40 80 120 140 Common source VDS = 10 V f = 1 mA Pulse test 0 1 3 2 0.5 1.5 2.5 1 10 0 −0.4 −0.6 −0.8 −1.2 −0.2 100 −1 3 1 5 VGS = 0 V Common source Ta = 25°C Pulse test 0 20 40 60 80 100 0 15 10 20 30 5 25 0 15 10 20 30 5 25 Common source Ta = 25°C ID = 8 A Pulse test 12 VDS VDD = 24 V 12 6 VDD = 24 V 6 |
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