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TPC8210 Scheda tecnica(PDF) 6 Page - Toshiba Semiconductor |
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TPC8210 Scheda tecnica(HTML) 6 Page - Toshiba Semiconductor |
6 / 7 page TPC8210 2007-01-16 6 Drain-source voltage VDS (V) Safe operating area 0.01 0.01 0.1 1 10 100 0.1 1 10 100 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. ID max (pluse) * 10 ms* 1 ms* VDSS max Pulse width tw (S) rth − tw 0.1 0.001 0.01 0.1 1 10 100 1000 1 10 100 1000 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s (4) (3) (2) (1) Single pulse |
Codice articolo simile - TPC8210_07 |
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Descrizione simile - TPC8210_07 |
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