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2SK3462 Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor |
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2SK3462 Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3462 2010-02-05 4 0 0 40 120 160 200 10 30 40 20 80 Case temperature Tc (°C) PD – Tc Case temperature Tc (°C) Vth – Tc 0 −80 −40 0 40 80 120 160 1 2 3 4 5 Common source VDS = 10 V ID = 1 mA Pulse test Total gate charge Qg (nC) Dynamic input/output characteristics 0 0 100 150 250 15 25 Common source ID = 3 A Tc = 25°C Pulse test 20 50 200 510 100 50 VDD = 200 V 0 10 15 25 5 20 Drain-source voltage VDS (V) IDR – VDS 1 0.1 0 −0.2 −0.4 −1.2 Common source Tc = 25°C Pulse test −0.6 −0.8 −1.0 −1.4 VGS = 10 V 3 5 0, −1 10 100 Case temperature Tc (°C) RDS (ON) – Tc ID = 1 A ID = 3 A 0 −80 −40 0 40 80 120 160 1 2 3 4 5 Common source VGS = 10 V Pulse test Drain-source voltage VDS (V) Capacitance – VDS Ciss Coss Crss 1000 0.1 100 10 1 1 10 100 0.3 3 30 VGS = 0 V f = 1 MHz Tc = 25°C |
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